Determination and analysis of optical constants for Ge15Se60Bi25 thin films

被引:37
|
作者
Atyia, H. E. [1 ,2 ]
Hegab, Na [1 ]
机构
[1] Ain Shams Univ, Fac Educ, Dept Phys, Cairo, Egypt
[2] Taif Univ, Fac Appl Med Sci Turabah, Dept Phys, Turabah, Saudi Arabia
关键词
Optical constants; Approximate methods; Accurate method; Absorption edge; Dielectric constants; Relative errors; ELECTRICAL-PROPERTIES; GE-SE; CHALCOGENIDE GLASSES; TEMPERATURE; PARAMETERS; DEPENDENCE; THICKNESS; CONDUCTIVITY; BEHAVIOR;
D O I
10.1016/j.physb.2014.07.068
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Thin films of Ge15Se60Bi25 were deposited, at room temperature, on glass substrates by thermal evaporation technique. The optical reflectance and transmittance of amorphous Ge15Se60Bi25 films were measured at normal incident in the wavelength range (500-2500 nm). The optical constants, the refractive index n and the absorption index k, were determined and analyzed according to different approximate methods using the transmittance measurements only and accurate method using the transmittance and reflectance measurements. Analysis of the absorption index k data reveal the values of the optical band gap E-g(opt), the width of tails E-e and the type of transitions. Some optical parameters such as, high frequency dielectric constant epsilon(infinity), dispersion parameters (oscillation energy E-s and the dispersion energy E-d), real and imaginary parts of complex dielectric constant (epsilon(1) and epsilon(2)) and dielectric parameters (dissipation factor tan delta, dielectric relaxation time tau, the volume and surface energy loss functions) were estimated by analyzing the refractive index n data.The relative errors for all optical parameters depending on different approximate methods were identified and discussed. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:189 / 196
页数:8
相关论文
共 50 条
  • [1] Influence of temperature and frequency on the AC conductivity and dielectric properties for Ge15Se60Bi25 amorphous films
    Atyia, H. E.
    Hegab, N. A.
    Affi, M. A.
    Ismail, M. I.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 574 : 345 - 353
  • [2] Determination of the thickness and optical constants of amorphous Ge-Se-Bi thin films
    Dahshan, A.
    Aly, K. A.
    PHILOSOPHICAL MAGAZINE, 2009, 89 (12) : 1005 - 1016
  • [3] Photoinduced effects on the optical constants of a-Ge-Se-Bi chalcogenide glassy thin films
    Hafiz, M. M.
    Othman, A. A.
    El-Nahass, M. M.
    Al-Motasem, A. T.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2007, 162 (09): : 669 - 676
  • [4] Optical spectroscopy and dispersion parameters of Ge15Se60X25 (X = As or Sn) amorphous thin films
    Atyia, Heba E.
    Hegab, N. A.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 63 (01):
  • [5] Optical constants and electrical conductivity of Ge20Se60Sb20 thin films
    Abu-Sehly, AA
    JOURNAL OF MATERIALS SCIENCE, 2000, 35 (08) : 2009 - 2013
  • [6] Optical constants and electrical conductivity of Ge20Se60Sb20 thin films
    A. A. Abu-Sehly
    Journal of Materials Science, 2000, 35 : 2009 - 2013
  • [7] Effect of Bi addition on the optical behavior of a-Ge-Se-In-Bi thin films
    Sharma, Ishu
    Tripathi, S. K.
    Barman, P. B.
    APPLIED SURFACE SCIENCE, 2008, 255 (05) : 2791 - 2795
  • [8] Photoinduced changes in the optical constants of Ge-Se-AgI thin films
    Boev, V
    Mitkova, M
    Nikolova, L
    Todorov, T
    Sharlandjiev, P
    OPTICAL MATERIALS, 2000, 13 (04) : 389 - 396
  • [9] Optical constants of new amorphous As-Ge-Se-Sb thin films
    Dahshan, A.
    Aly, K. A.
    ACTA MATERIALIA, 2008, 56 (17) : 4869 - 4875
  • [10] Electrical properties of amorphous Ge15Se60M25 where (M = As or Sn or Bi) films
    Afifi, M. A.
    Hegab, N. A.
    Atyia, H. E.
    Ismael, M. I.
    VACUUM, 2008, 83 (02) : 326 - 331