Influence of surface chemistry and point defects in TiN based electrodes on electrochemical capacitive storage activity

被引：12

作者：

Achour, Amine ^{[1
]}

Islam, Mohammad ^{[2
]}

Ahmad, Iftikhar ^{[2
]}

Le Brizoual, Laurent ^{[3
]}

Djouadi, Abdou ^{[4
]}

Brousse, Thierry ^{[4
,5
]}

机构：

[1] Univ Namur, Res Ctr Phys Matter & Radiat PMR, LISE Lab, B-5000 Namur, Belgium

[2] King Saud Univ, Ctr Excellence Res Engn Mat, Deanship Sci Res, POB 800, Riyadh 11421, Saudi Arabia

[3] Univ Rennes 1, IETR UMR CNRS 6164, Inst Elect & Telecommun, Campus Beaulieu Bat 11D 263 Av Gen Leclerc, F-35042 Rennes, France

[4] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, 2 Rue Houssiniere,BP32229, F-44322 Nantes 3, France

[5] FR CNRS, Reseau Stockage Elect Energie RS2E, F-3459 Paris, France

来源：

SCRIPTA MATERIALIA | 2018年 / 153卷

关键词：

Titanium nitride; Surface defects; Electrochemical capacitor; XPS; Cyclic voltammetry; NITRIDE THIN-FILMS; TITANIUM NITRIDE; VANADIUM NITRIDE;

D O I：

10.1016/j.scriptamat.2018.04.051

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of surface chemistry of reactive sputtered TiN electrodes in the electrochemical capacitors (ECs) was investigated. The TiN films were produced on vertically aligned carbon nanotubes. X-ray photoelectron spectroscopy analysis revealed surface defects generation with no effect on morphology. Cyclic voltammetry experiments were performed in aqueous 0.5 M K2SO4 solution and 1 M Et4NBF4 ((tetraethylammonium tetrafluoroborate)) organic electrolyte. The presence of oxygen vacancies and Ti interstitials on the top surface layer lead to enhanced electrochemical capacitive charge storage. Such findings open the way to design nitride films with optimized surface chemistry for use in the ECs. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：59 / 62

页数：4

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