Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method

被引：2
|
作者：
Xue, Yuan-Yuan [1 ]
Wang, Zu-Jun [1 ]
Liu, Min-Bo [1 ]
Xu, Rui [2 ]
Ning, Hao [2 ]
Zhao, Wen [1 ]
He, Bao-Ping [1 ]
Yao, Zhi-Bin [1 ]
Sheng, Jiang-Kun [1 ]
Ma, Wu-Ying [1 ]
Dong, Guan-Tao [1 ]
机构：
[1] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710613, Shaanxi, Peoples R China
[2] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China
来源：
NUCLEAR SCIENCE AND TECHNIQUES | 2019年 / 30卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Co-60 gamma rays; Transient effects; CMOS image sensor (CIS); Geant4;
D O I：
10.1007/s41365-019-0634-y
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The objective of this work is to analyze the transient effects of Co-60 gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500x500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.
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页数：7
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