The Zen of nonvolatile memories

被引:4
|
作者
Prinz, Erwin J. [1 ]
机构
[1] Freescale Semicond Inc, Austin, TX 78735 USA
关键词
measurement; design; reliability; experimentation; security; nonvolatile memories; floating gate; SONOS; nanocrystal; MRAM; phase change memory; FeRAM;
D O I
10.1109/DAC.2006.229232
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Silicon technology based nonvolatile memories (NVM) have achieved widespread adoption for code and data storage applications. In the last 30 years, the traditional floating gate bitcell has been scaled following Moore's law, but recently scaling limits have been encountered which will require alternative solutions after the 65 nm technology node. Both evolutionary and novel solutions are being pursued in the industry. While the traditional floating gate technology will scale to the 65 nm node, novel device structures and array architectures will be needed past that node.
引用
收藏
页码:815 / 820
页数:6
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