Electroplated micro-inductors and micro-transformers for wireless applications

被引:0
|
作者
Park, JY [1 ]
Bu, JU [1 ]
机构
[1] LG Elect Inst Technol, Microsyst Grp, Seocho Gu, Seoul 137724, South Korea
关键词
micro-inductors; mciro-transformers; RF; turn ratio; coupling; inductance; low temperature processes; multi-layer thick photoresist processes;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, solenoid-type RF micro-inductors and micro-transformers have been newly designed, fabricated, and characterized by using electroplating techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. In. particular, relationship of Performance characteristics and geometry of per try solenoid micro-inductors and micro-transformers is deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. The microwave characteristics of the fabricated micro-inductors and micro-transformers have been measured in the frequency range of 0.5 to 40 GHz. The micro-inductors have inductance between 1 nH and 7 nH, maximum quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Two types of solenoid micro-transformers with turn ratios of 1:1 and n:1 have been fabricated and characterized. They have the minimum insertion loss of about 0.6 dB and the wide. bandwidth of a few GBz.
引用
收藏
页码:744 / 748
页数:5
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