Nd,Cr4+:YAG passively Q-switched microlaser

A summary of our MicroSlab(TM) laser (patent pending) development activities will be presented. We demonstrated pulsed 1064 nm laser emissions from a 0.75 x 1.5 x 4 mm Nd,Cr4+:YAG slab laser. The Nd:YAG gain medium was grown on top of a Cr4+:YAG substrate by the liquid phase epitaxy growth method, were the Cr(4+)YAG layer acted as the passive Q switch. The slab end faces were coated as an end mirror and an output coupler to minimize cavity length. The gain medium was side pumped with a 0.1 x 1.0 laser diode beam, emitting at 808 run. These conditions produced the 1064 nm single pulse beam, with a pulse energy of 754 muJ and a pulse width of 0.97 ns. The corresponding peak power is 0.77 MW per pulse. A similar MicroSlab(TM) laser, different only in the location of the output coupler, was used to drive an intracavity KTP OPO. The cavity, emitting 1573 nm, achieved pulse energy greater than 200 muJ with a pulse width of 1.1 ns. We continue to optimize the pump source and other wavelength conversion crystals to develop highly energetic compact laser sources.