Self-organized formation of shell-like InAs/GaAs quantum dot ensembles

被引:4
|
作者
Pohl, UW
Pötschke, K
Lifshits, MB
Shchukin, VA
Jesson, DE
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Monash Univ, Sch Phys, Clayton, Vic 3800, Australia
基金
俄罗斯基础研究基金会;
关键词
quantum dot formation; multimodal distribution;
D O I
10.1016/j.apsusc.2005.12.092
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Formation of a multimodal quantum dot (QD) ensemble by strained layer epitaxy of InAs on GaAs near the critical value for the onset of the 2D-3D transition is studied. Reflection anisotropy spectroscopy is employed to confirm that a smooth surface is maintained during strained layer growth prior to QD formation. Instantaneous capping after deposition leads to InAs quantum wells with some thickness flucuations. Multimodal QD InAs ensembles form after an at least short growth interruption prior to cap layer deposition. The QDs consist of pure InAs with heights varying in steps of complete InAs monolayers. Related exciton energies indicate a simultaneous increase of both height and lateral extension, i.e. a shell-like increase of sizes. The formation of the multimodal QD ensemble is described by a kinetic approach. A growth scenario is presented where QDs having initially shorter base length stop vertical growth at a smaller height, accounting for the experimentally observed shell-like sub-ensemble structure. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:5555 / 5558
页数:4
相关论文
共 50 条
  • [1] Shell-like formation of self-organized InAs/GaAs quantum dots -: art. no. 045325
    Heitz, R
    Guffarth, F
    Pötschke, K
    Schliwa, A
    Bimberg, D
    Zakharov, ND
    Werner, P
    PHYSICAL REVIEW B, 2005, 71 (04)
  • [2] The strain relaxation of InAs/GaAs self-organized quantum dot
    Liu Yu-Min
    Yu Zhong-Yuan
    Ren Xiao-Min
    CHINESE PHYSICS B, 2009, 18 (03) : 881 - 887
  • [3] The strain relaxation of InAs/GaAs self-organized quantum dot
    刘玉敏
    俞重远
    任晓敏
    Chinese Physics B, 2009, (03) : 881 - 887
  • [4] THz emission spectroscopy of self-organized InAs quantum dot ensembles
    Molis, G.
    Arlauskas, A.
    Krotkus, A.
    Leyman, R.
    Bazieva, N.
    Rafailov, E.
    2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2012,
  • [5] Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
    Harris, L
    Ashmore, AD
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    Hill, G
    Clark, J
    APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3512 - 3514
  • [6] Exited-state lasing of InAs/GaAs self-organized quantum dot
    Inst. of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (03): : 295 - 298
  • [7] Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
    Harris, L
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    Hill, G
    APPLIED PHYSICS LETTERS, 1998, 73 (07) : 969 - 971
  • [8] Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers
    Fry, PW
    Harris, L
    Parnell, SR
    Finley, JJ
    Ashmore, AD
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    Hill, G
    Clark, JC
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 615 - 617
  • [9] Formation of self-organized quantum dot ensembles in unstrained GaAs/ZnSe/QD-Ge/ZnSe heterosystem
    Akimov, AN
    Fedosenko, EV
    Neizvestnyi, IG
    Shumsky, VN
    Suprun, SP
    Talochkin, AB
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2002, 1-2 : 191 - 201
  • [10] Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers
    Fry, P.W.
    Harris, L.
    Parnell, S.R.
    Finley, J.J.
    Ashmore, A.D.
    Mowbray, D.J.
    Skolnick, M.S.
    Hopkinson, M.
    Hill, G.
    Clark, J.C.
    1600, American Institute of Physics Inc. (87):