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- [1] Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2031 - 2036
- [2] Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (06):
- [3] CH4/H2 reactive ion etching induced damage of InP JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 2803 - 2807
- [5] GaInAsP/InP multiple-layered quantum-wire lasers fabricated by CH4/H2 reactive-ion etching Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (6 A): : 3410 - 3415
- [6] GdInAsP/InP multiple-layered quantum-wire lasers fabricated by CH4/H2 reactive-ion etching JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A): : 3410 - 3415
- [7] Optical characterization of ZnSe-based quantum structures fabricated by CH4/H2 reactive ion etching PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (01): : 567 - 571
- [8] REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1130 - 1140
- [10] Reactive ion etching of indium nitride using CH4 and H2 gases JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9A): : 5048 - 5051