Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

被引:1
|
作者
Liu, WK [1 ]
Lin, SM
Zhang, CS
机构
[1] Chinese Acad Sci, State Key Lab Integrated Optoelect Inst Semicond, Beijing 100083, Peoples R China
[2] Hebei Univ Technol, Coll Elect Informat, Tianjin 300130, Peoples R China
关键词
semiconductor microcavity; cavity polariton; exciton;
D O I
10.7498/aps.51.2052
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The reflectivity spectra at different incident angles of semiconductor microcavity having heavy-hole exciton and light-hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy-hole exciton mode and light-hole exciton mode) in the three cavity polaritons increase or decrease.
引用
收藏
页码:2052 / 2056
页数:5
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