Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE)

被引：4
|
作者：
Pratiwi, Nur'aini Dian [1 ]
Handayani, Mita [1 ]
Suryana, Risa [1 ]
Nakatsuka, Osamu [2 ]
机构：
[1] Sebelas Maret Univ, Fac Math & Nat Sci, Dept Phys, Jl Ir Sutami 364, Surakarta 57126, Indonesia
[2] Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
来源：
MATERIALS TODAY-PROCEEDINGS | 2019年 / 13卷
关键词：
porous; silicon; photolithography; etching; resistivity; PERFORMANCE;
D O I：
10.1016/j.matpr.2019.03.194
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Phenomena of electrical and optical properties in porous silicon (PSi) remain interested. In this study, we focus on fabrication of PSi on N-type Si(100) surface using photolithography and reactive ion etching (RIE) methods with variations of etching times for 10, 20, 30, and 40 min. SEM analysis demonstrated similar Psi in shape and size. Based on the profilometer and the four-point probe (FPP) measurement, the pore depth and the resistivity of Psi increase with the increasing etching time. The pores can be consideredas a defect on the silicon surface which inhibits electron diffusion so that the resistivity will increase. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页码：92 / 96
页数：5
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