The GMR effect of Cu/Co multilayer on Si(100)

被引：5
|
作者：
Ma, SC
Lo, CK
Yao, YD
Chiang, DY
Ying, TF
Huang, DR
机构：
[1] Ind Technol Res Inst, OptoElect & Syst Lab, Informat Storage Div, Mito, Ibaraki 310, Japan
[2] Acad Sinica, Inst Phys, Taipei, Taiwan
[3] Natl Chung Cheng Univ, Dept Phys, Chiayi 621, Taiwan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 209卷 / 1-3期
关键词：
GMR; magneto-resistance; R-H minor loop; multilayers;
D O I：
10.1016/S0304-8853(99)00666-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
(Cu/Co)(10) was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：131 / 134
页数：4
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