InxGa1-xAs/GaAs-based Intermediate Band Solar Cell: Effects of Quantum Dots

被引：0
|
作者：
Amin, Sayeda Anika [1 ]
Hasan, Md Tanvir [1 ]
Islam, Muhammad Shaffatul [2 ]
机构：
[1] AIUB, Dept Elect & Elect Engn, Dhaka, Bangladesh
[2] World Univ Bangladesh, Dept Elect & Elect Engn, Dhaka, Bangladesh
来源：
PROCEEDINGS OF THE 2016 IEEE REGION 10 CONFERENCE (TENCON) | 2016年
关键词：
InxGa1-xAs/GaAs; intermediate hand; quantum dots; EFFICIENCY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the influence of In0.53Ga0.47As/GaAs quantum dots (QDs) in the intermediate hand solar cell (IBSC). The In0.53Ga0.49As QDs have been inserted in the intrinsic region of a p-i-n GaAs solar cell in order to increase the absorption range as well as cell efficiency. The cell structure has been optimized with respect to the horizontal and vertical dot-to-dot spacing. The optimum efficiency is enhanced front 27.1% to 32.09% for increasing the number of QD layers.
引用
收藏
页码：2753 / 2756
页数：4
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