Control of thermal boundary resistance by increasing Ge ratio in nanocomposite with MnSi1.7 and SiGe

被引:7
|
作者
Kurosaki, Y. [1 ]
Yabuuchi, S. [1 ]
Nishide, A. [1 ]
Fukatani, N. [1 ]
Hayakawa, J. [1 ]
机构
[1] Hitachi Ltd, Ctr Exploratory Res, Res & Dev Grp, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan
关键词
CONDUCTIVITY; MULTILAYERS;
D O I
10.1063/1.5031871
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal boundary resistance (TBR) was controlled by changing the Ge ratio in a MnSi1.7-based nanocomposite with SiGe to investigate the effects of TBR on thermal transport. We demonstrated a continuous reduction of thermal conductivity with the Ge ratio down to 1.2 W/Km, which is less than the minimum thermal conductivity of MnSi1.7, even in granular structures: practical forms of thermoelectric (TE) technologies. The TBR between MnSi1.7 and SiGe was estimated quantitatively in multilayered structures to be as high as 5.6 x 10(-9) m(2) K/W and a detailed analysis suggests that 20%-30% of the thermal conductivity reduction is attributed to the TBR in granular structures. Our results shed light on the importance of controlling TBR in TE material design towards a widespread use of TE technologies, instead of utilizing rare materials or uneconomical nanostructures. Published by AIP Publishing.
引用
收藏
页数:5
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