Peculiarities of nanooxidation on flat surface

被引：0
|
作者：
Sheglov, DV [1 ]
Prozorov, AV [1 ]
Nasimov, DA [1 ]
Latyshev, AV [1 ]
Aseev, AL [1 ]
机构：
[1] Inst Semicond Phys SB RAS, Novosibirsk 630090, Russia
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2002年 / 5-6卷
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, tip-induced local anodic oxidation on Ti, GaAs, and Si films surfaces in ambient conditions is reported. The oxide patterns on smooth Ti, GaAs, and Si surfaces were obtained. The oxide layer thickness is studied as a function of the applied probe-sample voltage and the velocity of the tip. The local anodic oxidation of the ultra thin titanium film is investigated. To reach the best resolution, the extremely flat silicon surfaces were prepared in an UHV chamber of electron microscope by using the electromigration effect. The peculiarities of local anodic oxidation were investigated with the first Mott oxidation model. The average roughness of silicon surface was less than 1 Angstrom. Some examples of nanofabricated oxide patterns for nanoelectronic devices are presented.
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页码：239 / 246
页数：8
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