Low-angle boundaries in ZnGeP2 single crystals

被引:9
|
作者
Lei, Zuotao [1 ]
Okunev, Aleksei [2 ]
Zhu, Chongqiang [1 ]
Verozubova, Galina [3 ]
Yang, Chunhui [1 ]
机构
[1] Harbin Inst Technol, Sch Chem & Chem Engn, Harbin 150001, Heilongjiang, Peoples R China
[2] Yaroslav The Wise Novgorod State Univ, Veliky Novgorod 173003, Russia
[3] Inst Monitoring Climat & Ecol Syst SB RAS, Tomsk 634055, Russia
来源
基金
中国国家自然科学基金;
关键词
ZnGeP2 single crystals; X-ray topography; Borrmann effect; dislocations; low-angle boundaries; contrast rosettes; diffraction image simulation; PUMPED TERAHERTZ SOURCE; COMPACT; GROWTH;
D O I
10.1107/S1600576718001097
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The structure of low-angle boundaries in ZnGeP2 crystals grown by the vertical Bridgman technique was studied using Borrmann X-ray topography. The slip systems of the dislocations in the boundaries were identified by studying the contrast rosettes generated by the Borrmann effect, in the region near the dislocation core. It was shown that the boundaries are of two types: type I consists of edge dislocations of the {10}110 slip system, and type II of edge and mixed dislocations of the {010}100 slip system. The boundaries of both types, consisting of pure edge dislocations with lines along [001], are symmetrical tilt boundaries with [001] rotation axes. The misorientations generated by the boundaries were estimated to range between 2-20 and 1-40, respectively. Low-angle boundaries are thought to be formed by polygonization of dislocations, caused by thermoelastic stresses.
引用
收藏
页码:361 / 367
页数:7
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