Electronic structure of InAs-GaAs self-assembled quantum dots studied by perturbation spectroscopy

In spite of the intense interest in the last few years in InAs-GaAs self-assembled quantum dots, relatively little direct experimental information has been available on the electronic structure and the forms of the electron-hole wave functions. The present paper reviews the results of recent experiments in which the external perturbations of electric field, hydrostatic pressure and magnetic fields enable key information on the electronic structure of the QDs to be obtained. Some of this information is particularly surprising and contrary to the predictions of recent theories. These findings are expected to provide important guides to future theoretical modelling of the electronic structure of InAs QDs (C) 2000 Elsevier Science B.V, All rights reserved.