A SiGe differential active filter using a Sallen and Key cell

被引：0
|
作者：
Temcamani, F [1 ]
Diab, H [1 ]
Régis, M [1 ]
Gautier, JL [1 ]
机构：
[1] ENSEA, ECIME, F-95014 Cergy Pontoise, France
来源：
2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年
关键词：
D O I：
10.1109/RFIC.2004.1320705
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a 1.3 GHz band pass filter based on a Sallen and Key cell, is presented. A new amplifier topology of the S-K cell is proposed. Input and output differential amplifiers were optimized to have high performances in terms of CMMP, IP3 and noise figure. All the filter stages were realized with a SiGe BiCMOS technology. Comparison showed a good agreement between simulation and measurement. In particular, the S-K amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured. Measured even-mode rejection is close to 30 dB at center frequency.
引用
收藏
页码：651 / 654
页数：4
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