On the photoluminescence from Si nanocrystals in Er-doped silica by a double-pulse technique

被引：1
|
作者：
Borsella, E.
Falconieri, M.
Gourbilleau, F.
Rizk, R.
机构：
[1] ENEA, CR Frascati, I-00044 Frascati, Roma, Italy
[2] ENEA, CR Casaccia, I-00060 Rome, Italy
[3] SIFCOM, ENSICAEN, CNRS, UMR 6176, F-14050 Caen, France
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期
关键词：
D O I：
10.1063/1.2240306
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The mechanism of photoluminescence (PL) from Si nanocrystals (Si-nc's) in Er-doped silica is investigated by a double-pulse technique. It is shown that the decay time and the spectral intensity of PL emission from Si-nc's do not change when Si-nc's are reexcited by a delayed pulse in the presence of still excited Er ions. Results are compatible with a strong quenching of photoexcited Si-nc's through trap states and/or Auger-like interaction between Si-nc's and Er ions, both in the excited states, while PL emission originates from excitonic recombination in Si-nc's that do not couple to Er3+.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE OF HIGHLY ER-DOPED SILICA FILMS AND ER-DOPED GALLIUM-ARSENIDE
    KIM, HK
    LI, CC
    FANG, XM
    LI, YB
    LANGER, DW
    JOURNAL OF LUMINESCENCE, 1994, 60-1 : 220 - 222
  • [2] Photoluminescence from Er-doped Si-in-SiNx thin films
    Bian, Liu Fang
    Zhang, C. G.
    Chen, W. D.
    Hsu, C. C.
    Ma, L. B.
    Song, R.
    Cao, Z. X.
    OPTICAL MATERIALS, 2007, 29 (08) : 1071 - 1074
  • [3] Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters
    Guzman, J.
    Shin, S. J.
    Liao, C. Y.
    Yuan, C. W.
    Stone, P. R.
    Dubon, O. D.
    Yu, K. M.
    Beeman, J. W.
    Watanabe, M.
    Ager, J. W., III
    Chrzan, D. C.
    Haller, E. E.
    APPLIED PHYSICS LETTERS, 2009, 95 (20)
  • [4] Photoluminescence from Er-doped ITO films
    Yu, Sung Mi
    Kim, Jung Kyun
    Jin, Byeong Kyou
    Chung, Woon Jin
    Choi, Yong Gyu
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 499 - +
  • [5] Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO2 sensitized with Si nanocrystals
    Timmerman, D.
    Saeed, S.
    Gregorkiewicz, T.
    OPTICAL MATERIALS, 2011, 33 (07) : 1091 - 1093
  • [6] Ion beam synthesis of undoped and Er-doped Si nanocrystals
    Franzò, G
    Moreira, EC
    Pacifici, D
    Priolo, F
    Iacona, F
    Spinella, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 140 - 147
  • [7] Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation
    Ng, WL
    Temple, MP
    Childs, PA
    Wellhofer, F
    Homewood, KP
    APPLIED PHYSICS LETTERS, 1999, 75 (01) : 97 - 99
  • [8] Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals
    Izeddin, I.
    Moskalenko, A. S.
    Yassievich, I. N.
    Fujii, M.
    Gregorkiewicz, T.
    PHYSICAL REVIEW LETTERS, 2006, 97 (20)
  • [9] Visible and infrared photoluminescence from Er-doped SiOx
    Wan, J
    Sheng, C
    Lu, F
    Yuan, S
    Gong, DW
    Liao, LS
    Fang, YL
    Lin, F
    Wang, X
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 369 - 373
  • [10] Visible and infrared photoluminescence from Er-doped SiOx
    Wan, J
    Sheng, C
    Lu, F
    Yuan, S
    Gong, DW
    Liao, LS
    Fang, YL
    Lin, F
    Wang, X
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 369 - 373
12345