Two-Photon Absorption Induced Single-Event Effects: Correlation Between Experiment and Simulation

被引：14

作者：

Hales, Joel M. ^{[1
,2
]}

Roche, Nicolas J-H. ^{[2
,3
]}

Khachatrian, Ani ^{[1
,2
]}

McMorrow, Dale ^{[2
]}

Buchner, Stephen ^{[2
]}

Warner, Jeffrey ^{[2
]}

Turowski, Marek ^{[4
]}

Lilja, Klas ^{[4
]}

Hooten, Nicholas C. ^{[5
]}

Zhang, En Xia ^{[5
]}

Reed, Robert A. ^{[5
]}

Schrimpf, Ronald D. ^{[5
]}

机构：

[1] Sotera Def, Annapolis Jct, MD 20701 USA

[2] US Navy, Res Lab, Washington, DC 20375 USA

[3] George Washington Univ, Washington, DC 20052 USA

[4] RCI, Pleasanton, CA 94588 USA

[5] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期

关键词：

CMOS; free-carrier absorption; free-carrier refraction; nonlinear optics; optical kerr effect; silicon; single-event effect (SEE); single-event upset (SEU); two-photon absorption; TRANSIENT-RESPONSE; PULSES; DAMAGE;

D O I：

10.1109/TNS.2015.2489465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier-density distributions generated via two-photon absorption from pulsed laser excitation are simulated using nonlinear-optical beam propagation software. These simulated carrier-density distributions are used to calculate depth profiles of the integrated collected charge using a rectangular-parallel-piped approach for two silicon diodes of different structure. Using a set of proposed correlation metrics, the resulting simulated charge collection profiles are found to exhibit good agreement with measured transient charge-collection data for most, but not all of the metrics. The physical phenomena underlying the correlation metrics are discussed in detail. The remaining discrepancies that exist between the simulated and experimental results are addressed and their potential causes are detailed.

引用

页码：2867 / 2873

页数：7

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