Electronic properties of wide-gap Cu(In,Ga)(Se,S)2 thin-film solar cells

被引：0
|
作者：
Rau, U [1 ]
机构：
[1] Univ Stuttgart, Inst Phys Elect, D-70569 Stuttgart, Germany
来源：
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The contribution discusses the requirements that have to be fulfilled by wide-gap chalcopyrite solar cells in order to enable improved module performance and in view of possible all-chalcopyrite tandem solar cells. Recent research efforts for improving the performance of wide-gap chalcopyrite solar cell materials are reviewed. The article also discusses progress in understanding the electronic transport properties of this material class with a special focus on differences that occur in the materials and device properties when turning from standard Cu(In,Ga)Se-2 to the wide-gap alloys.
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页码：2847 / 2852
页数：6
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