Investigation of thermal expansion of 3D-stitched C-SiC composites

被引:19
|
作者
Kumar, Suresh [1 ]
Kumar, Anil [1 ]
Shukla, Anupam [2 ]
Devi, G. Rohini [1 ]
Gupta, A. K. [2 ]
机构
[1] DRDO, Adv Syst Lab, Hyderabad 500058, Andhra Pradesh, India
[2] Indian Inst Technol, Dept Chem Engn, New Delhi 110016, India
关键词
Composites; Thermal properties; Thermal expansion; 3D-stitched C-SiC; SILICON-CARBIDE; INFILTRATION; SYSTEMS;
D O I
10.1016/j.jeurceramsoc.2009.04.005
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Carbon fiber reinforced silicon carbide (C-SiC) composites are promising materials for a severe thermo-erosive environment. 3D-stitched C-SiC composites were fabricated using liquid silicon infiltration. The infiltration was carried out at 1450-1650 degrees C for 10-120 min in vacuum. Coefficient of thermal expansion (CTE) of the composites was determined in in-plane and through-thickness directions in the temperature range from room temperature to 1050 degrees C. The in-plane CTE varies in the range (0.5-2) x 10(-6)/degrees C, while that in the through-thickness direction, it varies in the range (1.5-4) x 10(-6)/degrees C. The effect of siliconization conditions is higher in the through-thickness direction than in the in-plane direction. The CTE values are lower than the values reported for chemical vapor impregnation based 3D C-SiC composites. An extensive microstructure study was also carried out to understand the thermal expansion behavior of the composites. It was found out that CTE behavior is closely related to the composition of the composite which in turn depends upon siliconization conditions. The best conditions were 1650 degrees C and 120 min. (C) 2009 Elsevier Ltd. All fights reserved.
引用
收藏
页码:2849 / 2855
页数:7
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