Grain growth in nanocrystalline yttrium-stabilized zirconia thin films synthesized by spin coating of polymeric precursors

被引:16
|
作者
Dong, JH
Hu, MZ [1 ]
Payzant, EA
Armstrong, TR
Becher, PF
机构
[1] Oak Ridge Natl Lab, Div Chem Technol, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
关键词
nanocrystalline film; grain growth; YSZ thin film; solid electrolyte; fuel cells; sol-gel coating;
D O I
10.1166/jnn.2002.082
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This article reports results of experimental studies on the microstructural evolution of nanocrystalline yttrium-stabilized zirconia thin films synthesized on a Si substrate via a polymeric precursor spin-coating approach. Grain growth behavior has been investigated at different annealing temperatures (700-1200 degreesC) for periods of up to 240 h. A similar film thickness (similar to120 nm) was maintained for all of the samples used in this study, to avoid variation in film thickness-dependent grain growth. The effects of the thermal history of the film and the annealing atmosphere on the grain growth were also studied. A simple semiempirical grain growth model has been developed to describe isothermal annealing data and to predict dynamic grain growth behavior during the sintering of polymeric precursor layers to form cubic-phase nanocrystalline yttrium-stabilized zirconia films.
引用
收藏
页码:161 / 169
页数:9
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