High-power high-repetition rate F2-lasers for 157 nm lithography

According to the ITRS-Roadmap, the 157nm wavelength of the F2-laser is the most likely solution to extend the optical lithography for production of ICs with critical dimensions below 70nm down to the 50nm node. The introduction of the 157nm lithography for high volume mass production requires high power, high repetition rate F2-lasers operating in the power range of more than 40W or at repetition rates of more than 4kHz. To meet the narrow time gap for an introduction of the full-field 157nm-scanner systems for real production in the year 2004/5 the community have to solve several challenging issues even in the laser section. F2-laser systems are needed which completely fulfill all specifications of a lithography light source, either for a refractive or a catadioptic projection optics. Verification and precise measurement of the key laser parameters in the VUV usually requires a specific development of the metrology, necessary for this task. In this report we present the progress which had been achieved in the development of high repetition rate high power single-line F2 lasers for catadioptic lithography application. The key features of a F2-laser >4kHz will be demonstrated. We will also review the main parameters and the performance data from the field of the standard lithography-grade F2020 a 2kHz system which is already applied for pilot scanner tool design. Some improvements of these systems with regard to single line power, dose stability, polarization and gas life will be shown and reliability data from the field will be reviewed. Critical dependence of the spectral properties of the F2-laser emission at 2 kHz and 4 kHz will be discussed. Some new investigations on the coherence properties of the Fluorine laser are also implemented.