An HAXPES study of Sn, SnS, SnO and SnO2

被引:70
|
作者
Fondell, M. [1 ]
Gorgoi, M. [2 ]
Boman, M. [1 ]
Lindblad, A. [1 ]
机构
[1] Uppsala Univ, Dept Chem Angstrom, Div Inorgan Chem, SE-75221 Uppsala, Sweden
[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-12489 Berlin, Germany
关键词
Hard X-ray photoelectron spectroscopy; Sn; HAXPES; SnO; SnO2; SnS; X-RAY-PHOTOEMISSION; ENERGY PHOTOELECTRON-SPECTROSCOPY; MEAN FREE PATHS; ELECTRONIC-STRUCTURE; HIGH-RESOLUTION; TIN OXIDES; XPS; SPECTRA; PROGRESS; SHIFTS;
D O I
10.1016/j.elspec.2014.07.012
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Hard X-ray photoelectron spectra have been recorded for Sn, SnO2, SnO and SnS. The binding energies of the core levels of elemental Sn from 2s up to, and including, 4d have been determined with least squares fitting and calibrated against an Au 4f standard. For the oxides and the sulphide data on Sn 3p, 3d core levels' binding energies and relative intensities are presented together with the binding energies of 0 Is, S Is and 2p. This study thus serves as a picture of tin's core level spectra compared to those of some of its oxides and a sulphide taken at photon energies beyond Al K alpha and Mg K alpha. (C) 2014 The Authors. Published by Elsevier B.V.
引用
收藏
页码:195 / 199
页数:5
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