High performance n- and p-type field-effect transistors based on tetrathiafulvalene derivatives

被引：138
|
作者：
Naraso
Nishida, Jun-ichi
Kumaki, Daisuke
Tokito, Shizuo
Yamashita, Yoshiro [1 ]
机构：
[1] Tokyo Inst Technol, Dept Elect Chem, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 157851, Japan
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 30期
关键词：
D O I：
10.1021/ja0630083
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The π-stacking structures were observed in the single crystals of tetrahalogeno-TTFs. Copyright © 2006 American Chemical Society.
引用
收藏
页码：9598 / 9599
页数：2
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