Growth of Ce-doped LiCaAlF6 and LiSrAlF6 single crystals by the Czochralski technique under CF4 atmosphere

被引：67
|
作者：
Shimamura, K
Baldochi, SL
Mujilatu, N
Nakano, K
Liu, ZL
Sarukura, N
Fukuda, T
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Inst Mol Sci, Okazaki, Aichi 4448585, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 211卷 / 1-4期
关键词：
LiCaAlF6; LiSrAlF6; crystal growth; effective distribution coefficient; UV laser;
D O I：
10.1016/S0022-0248(99)00789-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Ce-doped LiCaAlF6 (LiCAF) and LiSrAlF6 (LiSAF) single crystals were grown by the Czochralski technique. The formation of inclusions and cracks accompanying the crystal growth was investigated. The effective distribution coefficients of Ce3+ in LiCAF and LiSAF were determined to be 0.021 and 0.013, respectively, Ultraviolet pulse generation with an output energy of 60 mJ was obtained from a Ce:LiCAF laser. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：302 / 307
页数：6
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