Influence of the temperature on the dispersion of the surface polaritons in Zn3P2 - Material for the photovoltaic applications

被引：13
|
作者：
Shportko, K. [1 ]
Barlas, T. [1 ]
Venger, E. [1 ]
El-Nasser, H. [2 ]
Ponomarenko, V. [1 ]
机构：
[1] VE Lashkarev Inst Semicond Phys NAS Ukraine, Kiev, Ukraine
[2] Al al Bayt Univ, Dept Phys, Mafraq 130040, Jordan
来源：
CURRENT APPLIED PHYSICS | 2016年 / 16卷 / 01期
关键词：
Zinc diphosphides; Single crystal; Photovoltaics; Surface polaritons; Reflectance; ATR; Low temperatures; ZINC PHOSPHIDE;
D O I：
10.1016/j.cap.2015.10.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc diphosphide Zn3P2 is promising material for photovoltaic applications due to its physical properties. In this study dispersion of the surface polaritons v(s)(k) in Zn3P2 has been investigated at 10 and 300 K. Surface polaritons were excited using method of attenuated total reflection (ATR) spectroscopy. Influence of the temperature on the dispersion of the surface polaritons v(s)(k) in Zn3P2 is analyzed and discussed. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：8 / 11
页数：4
相关论文
共 50 条
  • [1] INFLUENCE OF THE SURFACE QUALITY ON THE REFLECTANCE OF ZN3P2
    JEZIERSKI, K
    MISIEWICZ, J
    KROLICKI, F
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (02): : K135 - K137
  • [2] ZN3P2 PHOTOVOLTAIC FILM GROWTH FOR ZN3P2/ZNSE SOLAR-CELL
    KAKISHITA, K
    AIHARA, K
    SUDA, T
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 35 (1-4) : 333 - 340
  • [3] Room temperature photoconductivity in Zn3P2
    Misiewicz, J.
    Infrared Physics, 1988, 28 (04): : 215 - 218
  • [4] SYNTHESIS AND SURFACE CHEMISTRY OF ZN3P2
    Kimball, Gregory M.
    Lewis, Nathan S.
    Atwater, Harry A.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 150 - 155
  • [5] ZN3P2 - A NEW MATERIAL FOR OPTOELECTRONIC DEVICES
    MISIEWICZ, J
    SZATKOWSKI, J
    MIROWSKA, N
    GUMIENNY, Z
    PLACZEKPOPKO, E
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 259 - 262
  • [6] ZN3P2 - A NEW MATERIAL FOR OPTOELECTRONIC DEVICES
    MISIEWICZ, J
    BRYJA, L
    JEZIERSKI, K
    SZATKOWSKI, J
    MIROWSKA, N
    GUMIENNY, Z
    PLACZEKPOPKO, E
    MICROELECTRONICS JOURNAL, 1994, 25 (05) : R23 - R28
  • [7] MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications
    Hermann, AM
    Madan, A
    Wanlass, MW
    Badri, V
    Ahrenkiel, R
    Morrison, S
    Gonzalez, C
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 82 (1-2) : 241 - 252
  • [8] THE LOW-TEMPERATURE PHOTOLUMINESCENCE IN ZN3P2
    MISIEWICZ, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (01): : K65 - K68
  • [9] THE ROOM-TEMPERATURE PHOTOCONDUCTIVITY IN ZN3P2
    MISIEWICZ, J
    INFRARED PHYSICS, 1988, 28 (04): : 215 - 218
  • [10] SURFACE PHOTOVOLTAGE STUDY OF INP AND ZN3P2
    THURGATE, SM
    LACUESTA, TD
    HUCK, NR
    SURFACE SCIENCE, 1989, 219 (03) : 420 - 428
12345