Numerical study on the wavelength-dependence of light extraction efficiency in AlGaN-based ultraviolet light-emitting diodes

被引：5
|
作者：
Ryu, Han-Youl [1 ]
机构：
[1] Inha Univ, Dept Phys, Inchon 402751, South Korea
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2014年 / 46卷 / 10期
关键词：
Ultraviolet LED; Light extraction efficiency; FDTD; OPTICAL-PROPERTIES; GAN;
D O I：
10.1007/s11082-014-9877-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wavelength-dependence of light extraction efficiency (LEE) in AlGaN-based ultraviolet (UV) light-emitting diode (LED) structures is numerically studied based on three-dimensional finite-difference time-domain methods. Due to strong UV light absorption in the p-GaN contact layer, LEE of the UV vertical LED structures remains to be only 6-7 % for the transverse-electric mode and 2-3 % for the transverse-magnetic mode, respectively. The effective LEE of UV LEDs is calculated by considering the optical polarization-dependent LEE, and is found to increase from 4 to 5.5 % as the wavelength increases from 260 to 360 nm. It is shown that the wavelength-dependence of LEE can partially explain the decrease in external quantum efficiency with decreasing wavelengths in AlGaN-based UV LEDs.
引用
收藏
页码：1329 / 1335
页数：7
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