Electrical injection of spin polarized electrons into single quantum dots

被引：0
|
作者：
Kuemmell, T. [1 ]
Arians, R. [1 ]
Huang, J. [1 ]
Wenisch, J. [2 ]
Brunner, K. [2 ]
Bacher, G. [1 ]
机构：
[1] Univ Duisburg Essen, D-47057 Duisburg, Germany
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期
关键词：
READ-OUT;
D O I：
10.1002/pssb.200880659
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We determine electrical spin injection into a single InAs quantum dot embedded in GaAs-based p-i-n diode structure using a diluted magnetic semiconductor (ZnMnSe) as a spin-source. The spin-information can be extracted directly by evaluating the polatisation degree of the single quantum dot electroluminescence signal. We obtain a spin polarisation up to 100% at T = 5 K that is decreasing with higher temperature. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：788 / 790
页数：3
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