Improvement of saturation characteristics of a frequency-demodulation CMOS image sensor

被引：0

作者：

Ohta, J ^{[1
]}

Yamamoto, K ^{[1
]}

Oya, Y ^{[1
]}

Kagawa, K ^{[1
]}

Tokuda, T ^{[1
]}

Nunoshita, M ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Nara 6600101, Japan

来源：

ASP-DAC 2004: PROCEEDINGS OF THE ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper demonstrates improvement of image quality in a frequency-demodulation CMOS image sensor. We have already demonstrated fundamental characteristics of a frequency-demodulation function but the sensor shows relatively poor saturation characteristics due to a crosstalk effect. By introducing sweeping out residual carriers in a photogate and discharging them into an overflow drain, a fabricated image sensor using a standard 0.6 mum CMOS technology exhibits better saturation characteristics. The output at the saturation region increases 30 times larger than the original one.

引用

页码：575 / 576

页数：2

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