Fabrication and Characterization of High Power 1064-nm DFB Lasers

被引：10

作者：

Tan Shao-Yang ^{[1
]}

Zhai Teng ^{[1
]}

Lu Dan ^{[1
]}

Wang Wei ^{[1
]}

Zhang Rui-Kang ^{[1
]}

Ji Chen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Compendex;

D O I：

10.1088/0256-307X/30/11/114202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A ridge waveguide distributed-feedback laser emitting at 1064 nm is demonstrated. Two low-temperature-grown In0.21Ga0.79As/GaAs quantum wells are employed as the active layer. A second-order grating is formed by holographic photolithography and wet-etching. The laser operates at a single-mode up to 255 mA, corresponding to an output power of 90 mW.

引用

页数：3

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