High Curie point CaBi2Nb2O9 thin films:: A potential candidate for lead-free thin-film piezoelectrics

被引：24
|
作者：
Simoes, A. Z. [1 ]
Ries, A. [1 ]
Riccardi, C. S. [1 ]
Gonzalez, A. H. M. [1 ]
Longo, E. [1 ]
Varela, J. A. [1 ]
机构：
[1] Univ Estadual Paulista, Inst Chem, BR-14801970 Araraquara, SP, Brazil
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 07期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1063/1.2357419
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.
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页数：4
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