Absence of the ordinary and extraordinary Hall effects scaling in granular ferromagnets at metal-insulator transition

被引:13
|
作者
Bartov, D. [1 ]
Segal, A. [1 ]
Karpovski, M. [1 ]
Gerber, A. [1 ]
机构
[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Phys & Astron, IL-69978 Tel Aviv, Israel
来源
PHYSICAL REVIEW B | 2014年 / 90卷 / 14期
关键词
FILMS;
D O I
10.1103/PhysRevB.90.144423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating, and strongly insulating. Scaling between both the ordinary and the extraordinary Hall effects and material's resistivity is absent in the weakly insulating range characterized by logarithmic temperature dependence of conductivity. The results provide compelling experimental confirmation for recent models of granular metals predicting transition from logarithmic to exponential conductivity temperature dependence when intergranular conductance drops below the quantum conductance value and loss of Hall effect scaling when intergranular conductance is higher than the quantum one. The effect was found at high temperatures and reflects the granular structure of the material rather than low-temperature quantum corrections.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Hidden scaling in the quantum Hall metal-insulator transition
    Moriconi, L
    Pereira, ALC
    Schulz, PA
    PHYSICAL REVIEW B, 2004, 69 (04)
  • [2] Scaling behavior of the Hall coefficient of Si:P at the metal-insulator transition
    Madel, O
    Schlager, HG
    vonLohneysen, H
    ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1997, 102 (04): : 473 - 478
  • [3] Hall effect at a tunable metal-insulator transition
    Teizer, W
    Hellman, F
    Dynes, RC
    PHYSICAL REVIEW B, 2003, 67 (12):
  • [4] Scaling at the metal-insulator transition in two dimensions
    Abrahams, E
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 1998, 3 (1-3): : 69 - 78
  • [5] Scaling of the Level Compressibility at the Anderson Metal-Insulator Transition
    Ndawana, Macleans L.
    Roemer, Rudolf A.
    Schreiber, Michael
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2003, 72
  • [6] EFFECTS OF IMPURITIES ON METAL-INSULATOR TRANSITION
    RICE, TM
    BRINKMAN, WF
    PHYSICAL REVIEW B, 1972, 5 (11): : 4350 - &
  • [7] Spectral compressibility at the metal-insulator transition of the quantum Hall effect
    Klesse, R
    Metzler, M
    PHYSICAL REVIEW LETTERS, 1997, 79 (04) : 721 - 724
  • [8] Localization and metal-insulator transition in multilayer quantum Hall structures
    Wang, ZQ
    PHYSICAL REVIEW LETTERS, 1997, 79 (20) : 4002 - 4005
  • [9] Scaling and the metal-insulator transition in Si/SiGe quantum wells
    Lam, J
    DIorio, M
    Brown, D
    Lafontaine, H
    PHYSICAL REVIEW B, 1997, 56 (20): : 12741 - 12743
  • [10] Scaling of terahertz conductivity at the metal-insulator transition in doped manganites
    Pimenov, A
    Biberacher, M
    Ivannikov, D
    Loidl, A
    Mukhin, AA
    Goncharov, YG
    Balbashov, AM
    PHYSICAL REVIEW B, 2006, 73 (22):