ISOVPE grown Hg1-xCdxTe on oriented CdTe, CdZnTe and CdTeSe

Hg1-xCdxTe (MCT) epitaxial layers were grown on (110) CdTe, (110) CdZnTe and (110) CdTeSe substrates by the Isothermal Vapor Phase Epitaxy (ISO VPE) method with no aditional Hg. CdZnTe and CdTeSe substrates have been used to achieve a closer lattice math with MCT. Furthermore these substrates usually have lower dislocation density. Epitaxial MCT is an important material for advanced detectors. As the structural defects in MCT layers are major limiting factors for device fabrication, it is highly desirable to improve their crystalline qualify. The characterization of MCT layers include optical and scanning electron microscopies, chemical etching, X-ray diffraction, electron microprobe with the wave length dispersive spectroscopic mode, and Hall effect measurements.