Enhanced dielectric properties of Ca2+ doped Li-Al-Si photoetchable glass

被引：10
|
作者：
Liang, Tianpeng [1 ,2 ]
Zhang, Jihua [1 ,2 ]
Chen, Hongwei [1 ,2 ]
Zhang, Peng [1 ,2 ]
Zhao, Haolin [1 ,2 ]
Gan, Gongwen [1 ,2 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
[2] Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Sichuan, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2018年 / 44卷 / 08期
关键词：
Dielectric properties; Three dimensional; Photoetchable Glass; Interposer; MICROSTRUCTURE; RATIO;
D O I：
10.1016/j.ceramint.2018.01.209
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The Li-Al-Si photoetchable glass (PEG) easily forms a complex three-dimensional (3D) structure, which is promising as an interposer in 3D integrated microsystems. However, its dielectric loss is rather large (similar to 10(-2)@1 GHz), which inhibits the corresponding application in radio frequency (RF) microsystems. In this paper, the enhancement of dielectric properties caused by of Ca doping on the microstructure of the Li-Al-Si photoetchable glass system was investigated. The structure and performance were analyzed through X-ray diffraction (XRD), Mid-infrared spectroscopy analysis (MIR), Raman spectroscopy and impedance analysis. The results demonstrated that a significant modification in the dielectric properties were obtained with dielectric loss of 3 x 10(-3). The reason was attributed to the decreased number of the non-oxygen bridge, which makes the structure more stable. Using hydrofluoric (HF) etching, through glass vias with a diameter of 117 mu m were obtained.
引用
收藏
页码：8756 / 8760
页数：5
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