Experimental study on SET/RESET conditions for graphene resistive random access memory

被引：2
|
作者：
Shindome, Aya [1 ,3 ]
Takahashi, Tsunaki [3 ]
Oda, Shunri [2 ]
Uchida, Ken [1 ,3 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
[3] Keio Univ, Dept Elect & Elect Engn, Yokohama, Kanagawa 2238522, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期
关键词：
SUSPENDED GRAPHENE; INTERCONNECTS; BANDGAP; DEVICES; FILMS;
D O I：
10.7567/JJAP.53.04EN02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and that there is only one local point where the ReRAM effect occurs in a two-terminal device. Further investigation of the SET conditions in a graphene ReRAM suggests that the SET operation is driven by a potential difference within the ReRAM device. Finally, the time dependence of the SET operation is assessed, revealing that it occurs when the transient gate voltage is reduced abruptly from 10 to 0V. (C) 2014 The Japan Society of Applied Physics
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页数：5
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