Aging mechanism of GaN-based yellow LEDs with V-pits

被引：2

作者：

Zhang, Tian-Ran ^{[1
]}

Fang, Fang ^{[1
]}

Wang, Xiao-Lan ^{[1
]}

Zhang, Jian-Li ^{[1
]}

Wu, Xiao-Ming ^{[1
]}

Pan, Shuan ^{[1
]}

Liu, Jun-Lin ^{[1
]}

Jiang, Feng-Yi ^{[1
]}

机构：

[1] Nanchang Univ, Natl Inst LED Silicon Substrate, Nanchang 330096, Jiangxi, Peoples R China

来源：

CHINESE PHYSICS B | 2019年 / 28卷 / 06期

关键词：

GaN-based; yellow LED; aging mechanisms; V-pits; LIGHT-EMITTING-DIODES; DEGRADATION; EFFICIENCY; DC;

D O I：

10.1088/1674-1056/28/6/067305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaN-based yellow light-emitting diodes (LEDs) on Si substrates are aged at a direct current density of 50 A/cm(2) for 500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm(2). Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley-Rrad-Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.

引用

页数：5

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