Mapping interfacial excess in atom probe data

被引：32

作者：

Felfer, Peter ^{[1
,2
]}

Scherrer, Barbara ^{[2
,3
]}

Demeulemeester, Jelle ^{[4
]}

Vandervorst, Wilfried ^{[4
,5
]}

Cairney, Julie M. ^{[1
,2
]}

机构：

[1] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[2] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[3] ETH, Zurich, Switzerland

[4] IMEC VZW, B-3001 Heverlee, Belgium

[5] Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Leuven, Belgium

来源：

ULTRAMICROSCOPY | 2015年 / 159卷

关键词：

Atom probe tomography; Interface; Grain boundary; Interfacial excess mapping; Data analysis; GRAIN-BOUNDARIES; SEGREGATION; TOMOGRAPHY;

D O I：

10.1016/j.ultramic.2015.06.002

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Using modern wide-angle atom probes, it is possible to acquire atomic scale 3D data containing 1000 s of nm(2) of interfaces. It is therefore possible to probe the distribution of segregated species across these interfaces. Here, we present techniques that allow the production of models for interfacial excess (IE) mapping and discuss the underlying considerations and sampling statistics. We also show, how the same principles can be used to achieve thickness mapping of thin films. We demonstrate the effectiveness on example applications, including the analysis of segregation to a phase boundary in stainless steel, segregation to a metal-ceramic interface and the assessment of thickness variations of the gate oxide in a fin-FET. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：438 / 444

页数：7

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