Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

被引：41
|
作者：
Hu, Zhijian [2 ]
Bao, Yanjun [1 ]
Li, Ziwei [1 ]
Gong, Yongji [3 ]
Feng, Rui [1 ]
Xiao, Yingdong [1 ]
Wu, Xiaochun [2 ]
Zhang, Zhaohui [1 ]
Zhu, Xing [1 ,2 ]
Ajayan, Pulickel M. [3 ]
Fang, Zheyu [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[2] Natl Ctr Nanosci & Technol, Key Lab Nanoscale Measurement & Standardizat, Beijing 100190, Peoples R China
[3] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
来源：
SCIENCE BULLETIN | 2017年 / 62卷 / 01期
基金：
北京市自然科学基金; 中国国家自然科学基金;
关键词：
Temperature-dependent; Raman spectra; Photoluminescence; Transition metal dichalcogenides; Heterostructures; VALLEY POLARIZATION; PHONON SHIFTS; MOS2; MODES;
D O I：
10.1016/j.scib.2016.11.002
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E-2g(1) and A(1g) modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor. (C) 2016 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
引用
收藏
页码：16 / 21
页数：6
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