Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

被引：8

作者：

Cui, J. B. ^{[1
]}

Thomas, M. A. ^{[1
]}

Soo, Y. C. ^{[1
]}

Kandel, H. ^{[1
]}

Chen, T. P. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 15期

关键词：

P-TYPE ZNO; ACCEPTOR PAIR LUMINESCENCE; ELECTRICAL-PROPERTIES; TEMPERATURE; TRANSITIONS; PRESSURE; TARGET; PLD; SI;

D O I：

10.1088/0022-3727/42/15/155407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O-2 and N-2. The presence of N-2 during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N-2 concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N-2 concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

引用

页数：7

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