InAs HEMT narrowband amplifier with ultra-low power dissipation

被引：30
|
作者：
Kruppa, W. [1 ]
Boos, J. B. [1 ]
Bennett, B. R. [1 ]
Papanicolaou, N. A. [1 ]
Park, D. [1 ]
Bass, R. [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 12期
关键词：
D O I：
10.1049/el:20061107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design, fabrication and performance of a prototype narrowband amplifier using InAs-channel HEMTs are reported. The amplifier, which is realised on an RT/Duroid circuit board with a combination of transmission lines and lumped components, is intended for a long-life battery-powered application. The two-stage amplifier has 20 dB of gain with a bandwidth of 4% in S-band and dissipates a total power of only 365 mu W.
引用
收藏
页码：688 / 690
页数：3
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