Impact of forming pulse geometry and area scaling on forming kinetics and stability of the low resistance state in HfO2-based RRAM cells

被引：0
|
作者：
Lorenzi, P. [1 ,2 ]
Rao, R. [1 ,2 ]
Irrera, F. [1 ,2 ]
机构：
[1] Univ Roma La Sapienza, DIET, Rome, Italy
[2] Univ Roma La Sapienza, IUNET, Rome, Italy
来源：
2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2012年
关键词：
RRAM; MIM device; HfO2; forming kinetics; forming pulse geometry; area scaling; low resistance state; stress;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
In this work key aspects of the electroforming in RRAM cells with HfO2 oxide and Pt electrodes are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time and the resistance after forming as a function of the voltage pulse geometry and the device area.
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页数：4
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