The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs

被引：15
|
作者：
Khachatrian, A. [1 ]
Buchner, S. [1 ]
Koehler, A. [1 ]
Affouda, C. [1 ]
McMorrow, D. [1 ]
LaLumondiere, S. D. [2 ]
Dillingham, E. C. [2 ]
Bonsall, J. P. [2 ]
Scofield, A. C. [2 ]
Brewe, D. L. [3 ]
机构：
[1] US Naval Res Lab, Washington, DC 20375 USA
[2] Aerosp Corp, El Segundo, CA 90245 USA
[3] Argonne Natl Lab, Lemont, IL 60439 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 07期
关键词：
Charge generation; GaN; gate-connected field plate; HEMT; single-event transients (SETs); single-photon absorption; X-rays; CURRENT COLLAPSE; ABSORPTION; PRISTINE; VOLTAGE;
D O I：
10.1109/TNS.2019.2910493
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. For the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge.
引用
收藏
页码：1682 / 1687
页数：6
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