A High-Efficiency Two-Stage GaAs HBT Doherty Power Amplifier With Thermal Compensation for WLAN Application

被引：5
|
作者：
Wan, Shun [1 ]
Chen, WenHua [1 ]
Xia, BoWen [1 ]
Lv, Guansheng [1 ]
Chen, Long [1 ]
Li, DongHao [1 ]
Feng, Zhenghe [1 ]
机构：
[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
来源：
2021 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2021) | 2021年
关键词：
Doherty power amplifier (DPA); InGaP/GaAs heterojunction bipolar transistor (HBT); Thermally compensated dynamic bias circuit; WLAN;
D O I：
10.1109/IWS52775.2021.9499563
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a high-efficiency Doherty power amplifier (DPA) using an InGaP/GaAs heterojunction bipolar transistor (HBT) process is presented. The DPA aims for the application of 2.4 GHz wireless local area network (WLAN) systems with a high peak-to-average power ratio (PAPR) . The traditional bulky quarter-wavelength line is realized using a low-pass 7r-type network for miniaturization and low loss. A thermally compensated dynamic bias circuit is applied to increase thermal stability. Under the excitation of a 40-MHz 64-quadratic-amplitude modulation(QAM) signal, the proposed DPA achieves a gain of 29 dB gain, an average power of 26 dBm, and an average power added efficiency (PAE) up to 21% Good error vector magnitude (EVM) and adjacent channel leakage ratio (ACLR) performance are also measured, which demonstrates EVM and ACLR after digital pre-distortion (DPD) are -42 dB and -50.7 dBc, respectively.
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页数：3
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