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Higher-order topological insulators, topological pumps and the quantum Hall effect in high dimensions
被引:31
|作者:
Petrides, Ioannis
[1
]
Zilberberg, Oded
[1
]
机构:
[1] Swiss Fed Inst Technol, Inst Theoret Phys, CH-8093 Zurich, Switzerland
来源:
基金:
瑞士国家科学基金会;
关键词:
POLARIZATION;
SOLITONS;
D O I:
10.1103/PhysRevResearch.2.022049
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Topological insulators are materials with spectral bands associated with an integer-valued index, manifesting through quantized bulk phenomena and robust boundary effects. In this Rapid Communication, we demonstrate that higher-order topological insulators are descendants from a high-dimensional chiral semimetal. Specifically, we apply dimensional reduction to an ancestor four-dimensional Chern insulator, and obtain two-dimensional (2D) second-order topological insulators when the former becomes chiral. Correspondingly, we derive the quantized charge accumulation at the corners of the 2D descendants and relate it to the topological index-the second Chern number-of the ancestor model. Our results provide a clear connection between the boundary states of higher-order topological insulators and topological pumps-the latter being dynamical realizations of the quantum Hall effect in high dimensions.
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