Analysis of nitride-based quantum well LEDs and novel white LED design

被引：0
|
作者：
Xiao, D [1 ]
Kim, KW [1 ]
Bedair, SM [1 ]
Zavada, JM [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
LIGHT -EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VIII | 2004年 / 5366卷
关键词：
white LED; quantum well; nitride;
D O I：
10.1117/12.524424
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fundamental electrical and optical properties of strained wurtzite InGaN/GaN-based quantum well light emitting diodes are calculated based on the Rashba-Sheka-Pikus Hamiltonian in the vicinity of the F point. The theoretical results show an excellent correlation with experiments. A novel design of using AlInGaN as quantum barrier is proposed to realize efficient red emission, which is hard to achieve if GaN is used as barrier. To achieve high efficiency the important factors relating to the oscillator strength are discussed in detail.
引用
收藏
页码：85 / 96
页数：12
相关论文
共 50 条
  • [1] Quantum well-free nitride-based UV LEDs emitting at 380 nm Quantum well-free nitride-based UV LEDs emitting at 380 nm
    de Mierry, Philippe
    Tinjod, Frank
    Chenot, Sebastien
    Lancefield, David
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007, 4 (01): : 13 - +
  • [2] Design and performance of nitride-based UV LEDs
    Crawford, MH
    Han, J
    Chow, WW
    Banas, MA
    Figiel, JJ
    Zhang, L
    Shul, RJ
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 2000, 3938 : 13 - 23
  • [3] Luminescence of novel rare-earth doped nitride-based phosphors for white LEDs
    Li, Y. Q.
    de With, G.
    Hintzen, H. T.
    IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2006, : 1225 - 1226
  • [4] ESD engineering of nitride-based LEDs
    Su, YK
    Chang, SJ
    Wei, SC
    Chen, SM
    Li, WL
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (02) : 277 - 281
  • [5] Improvements sought in nitride-based LEDs
    Burgess, DS
    PHOTONICS SPECTRA, 2004, 38 (10) : 90 - 90
  • [6] Gallium nitride-based LED may emit white light intrinsically
    不详
    LASER FOCUS WORLD, 2004, 40 (03): : 13 - 13
  • [7] Atomic layer epitaxy for quantum well nitride-based devices
    Hite, Jennifer
    Nepal, Neeraj
    Anderson, Virginia R.
    Freitas, Jaime A.
    Mastro, Michael A.
    Eddy, Charles R., Jr.
    QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIII, 2016, 9755
  • [8] Nitride-based LEDs with textured side walls
    Chang, CS
    Chang, SJ
    Su, YK
    Lee, CT
    Lin, YC
    Lai, WC
    Shei, SC
    Ke, JC
    Lo, HM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (03) : 750 - 752
  • [9] Nitride-based flip-chip ITO LEDs
    Chang, SJ
    Chang, CS
    Su, YK
    Lee, CT
    Chen, WS
    Shen, CF
    Hsu, YP
    Shei, SC
    Lo, HM
    IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2005, 28 (02): : 273 - 277
  • [10] Developing nitride-based blue LEDs on SiC substrates
    Edmond, J
    Lagaly, J
    JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1997, 49 (09): : 24 - 26
12345