High-quality monolayer graphene for bulk laser mode-locking near 2 μm

被引：66
|
作者：
Wan, Honglin [1 ]
Cai, Wei [1 ]
Wang, Fei [1 ]
Jiang, Shouzhen [1 ]
Xu, Shicai [1 ]
Liu, Jie [1 ]
机构：
[1] Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Graphene saturable absorber; 2 mu m laser; Passively mode-locked; Diode-pumped; Tm:YAP crystal; DOPED FIBER LASER; SATURABLE ABSORBER; TM; MOS2; YAG;
D O I：
10.1007/s11082-015-0277-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The large-area and high-quality monolayer graphene film was grown on Cu foil by chemical vapor deposition (CVD) technique. A stable diode-pumped passively mode-locked Tm:YAP laser using the high-quality monolayer graphene as saturable absorber (SA) was accomplished for the first time. Under the absorbed pump power of 7.67 W, the maximum output power was 256 mW at the center wavelength of 1988.5 nm. The pulse train with a repetition rate of 62.38 MHz was generated with the highest single pulse energy of 4.1 nJ. Our work displays that graphene was a promising saturable absorber in making low-cost and ultrafast lasers.
引用
收藏
页码：1 / 8
页数：8
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