Investigating extreme ultraviolet radiation chemistry with first-principles quantum chemistry calculations

被引:3
|
作者
Ma, Jonathan H. [1 ,2 ]
Wang, Han [3 ]
Prendergast, David [3 ]
Neureuther, Andrew [1 ,4 ]
Naulleau, Patrick [1 ]
机构
[1] Lawrence Berkeley Lab, Mat Sci Div, Ctr Xray Opt, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Lawrence Berkeley Lab, Mol Foundry, Berkeley, CA USA
[4] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源
关键词
extreme ultraviolet lithography; extreme ultraviolet exposure chemistry; photoacid generator chemistry; radiation chemistry; extreme ultraviolet fundamentals; ENERGIES; PHOTOCHEMISTRY; STATES;
D O I
10.1117/1.JMM.19.3.034601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In extreme ultraviolet (EUV) lithography, chemistry is driven by secondary electrons. A deeper understanding of these processes is needed. However, electron-driven processes are inherently difficult to experimentally characterize for EUV materials, impeding targeted material engineering. A computational framework is needed to provide information for rational material engineering and identification at a molecular level. We demonstrate that density functional theory calculations can fulfill this purpose. We first demonstrate that primary electron energy spectrum can be predicted accurately. Second, the dynamics of a photoacid generator upon excitation or electron attachment are studied with ab-initio molecular dynamics calculations. Third, we demonstrate that electron attachment affinity is a good predictor of reduction potential and dose to clear. The correlation between such calculations and experiments suggests that these methods can be applied to computationally screen and design molecular components of EUV material and speed up the development process. (C) 2020 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数:11
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