Characteristic features of the accumulation of vacancy- and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents

被引：5
|
作者：
Kolkovskii, II [1 ]
Lukyanitsa, VV [1 ]
机构：
[1] BELORUSSIAN STATE MED INST, MINSK 220116, BELARUS
来源：
SEMICONDUCTORS | 1997年 / 31卷 / 04期
关键词：
D O I：
10.1134/1.1187183
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The formation of the main radiation defects in silicon (A and E centers, C-i- C, and C-i-O-i complexes) in dislocation-free crystals and crystals with a low dislocation density (N-D similar or equal to 1x10(4) cm(-2)) have been investigated as a function of the oxygen density N-o. The characteristic features of the accumulation and annealing of radiation defects observed in dislocation-free silicon are interpreted taking into account the presence of interstitial inclusions in the volume of such crystals. It has been determined that the gettering properties of the inclusions depend in a complicated manner on the oxygen concentration and are most obvious when N-o similar or equal to 3 x 10(16) cm(-3). (C) 1997 American Institute of Physics.
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页码：340 / 343
页数：4
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