Effect of BiFeO3 doping on ferroelectric properties of Na0.5Bi0.5TiO3-BaTiO3 based thin film derived by sol-gel method

被引：8
|
作者：
Li, L. Q. [1 ]
Xiong, Y. [2 ]
Tang, M. H. [1 ]
Cheng, C. P. [1 ,3 ]
Ouyang, J. [4 ]
机构：
[1] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Sch Math & Computat Sci, Xiangtan 411105, Hunan, Peoples R China
[3] Hunan Inst Engn, Xiangtan 411104, Hunan, Peoples R China
[4] Shandong Univ, Sch Mat Sci & Engn, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Peoples R China
来源：
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2014年 / 72卷 / 02期
基金：
中国国家自然科学基金;
关键词：
NBT-6BT-xBFO; Thin films; Sol-gel; Ferroelectricity; FREE PIEZOELECTRIC CERAMICS; MORPHOTROPIC PHASE-BOUNDARY; ELECTRICAL-PROPERTIES; MICROSTRUCTURE;
D O I：
10.1007/s10971-014-3448-8
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
0.94Na(0.5)Bi(0.5)TiO(3)-0.06BaTiO(3) (NBT-6BT) and (0.94 - x) Na0.5Bi0.5TiO3-0.06BaTiO(3)-xBiFeO(3) (NBT-6BT-xBFO, x = 0.03, 0.05 and 0.08) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. Relative permittivity and remnant polarization were maximized at 5 % BFO substitution. Compared with 0.94NBT-0.06BT, the leakage current density of 0.89NBT-0.06BT-0.05BFO at 600 kV/cm is reduced by one order of magnitude. Enhanced ferroelectricity was also achieved in 0.89NBT-0.06BT-0.05BFO, the remnant polarization (2P(r)) values of 0.89NBT-0.06BT-0.05BFO and 0.94NBT-0.06BT are 46 and 24 mu C/cm(2).
引用
收藏
页码：394 / 397
页数：4
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